Obtaining new types of compounds between silicon and cadmium sulfide

The n + CdS-nCdS-nSi structures were obtained, and their volt-ampere characteristics at different temperatures studied. dependence of the characteristic shows that sublinear quadratic section these has a current growth with voltage. It is determined in flow direction low illumination levels work as an injection photodiode. And under laser λ=0.625 μm power P=1.2 µW/cm 2 have spectral sensitivity 2042 A/W, bias voltage 10 V. At irradiation by white light energy W=3.6-10µW·s it integral ≈21 A/I'm (2310 A/W) U=10V.